Dear Rietvelders:
In this moment we have an emergency and I will appreciate if anyone could
help me.
The oil capacitor of our X-ray Powder Diffractometer Rigaku D/MAX IIIB
suffered a damage and need replace it. The specifications are:
Brand: SHIZUKI ELECTRIC Co
Type: CMPGA
W.V: 31.5 KVDC
T.V: 94
Thank you very much! I think I find them.
Jin Peng
Department of Physics, Tulane University
New Orleans, LA, 70118
-Original Message-
From: Peng, Jin [mailto:jpe...@tulane.edu]
Sent: 2010-2-18 [星期四] 18:31
To: rietveld_l@ill.fr
Subject: the error bars of lattice parameters using GSAS
H
Hi all,
The certification of SRM 660b has been completed and the paperwork is in the
final stages of review, etc. This process typically takes no longer than a
couple of months. The new SRM has been prepared with a dedicated processing
run to synthesize LaB6 with the 11boron isotope enriched
Dear Rietvelders,
I am using Fullprof to microstructural analysis of particles. I have
one type of particle but different sample with different sizes
(particles increase after heat treatment). Their crystallites size
fluctuates between 10nm and 1µm. I know that 1µm is big for a refinement
Ri
Hi Wing,
I purchased LaB6 from http://www.thegemdugout.com/ for a fraction of price
NIST charges and the same quality.
Peter Zavalij
X-ray Crystallographic Center
University of Maryland
College Park, MD 20742
Phone: 301-405-1861
From: Julian Tolchard [mailto:tolch...@material.
Hello! I'm not conversant with Raman spectroscopy, but I wouldn't recommend
EDS analyses for precisely establishing chemical composition, especially if
You mean analyzing the 3D (not thin section) samples scanning electron
microscope equipped with EDS - it would just be laden with error connecte
Such an offset of the theta (omega) axis violates the para-focusing
condition of the Bragg-Brentano geometry. You will get diffracted
intensity from positions far below and above the gonimeter axis, i.e.
far outside the focusing circle. The only option to reduce this effect
is a reduction of th
Dear Huy,
as it was pointed out in previous letter by Joerg Bergmann, line broadening
is caused by violation of theta-2theta relationship.
More info can be found in the following articles:
1. R. Berthold. Z. Angew. Phys. 7 (1955) 443.
2. H. Toraya, J. Yoshino. J. Appl. Cryst. 27 (1994) 961.
Be
Besides Joerg's suggestion of mis-cut substrates (which may be too
expensive for use for thin film growth experiments) you could use Si
wafers cut to (100). The first allowed peak in that direction is (400),
which is at about 70 degrees 2theta for Cu K-alpha. That will still
reflect any brems
Am Freitag, den 19.02.2010, 11:21 +0100 schrieb Huy LE-QUOC:
> Dear Rietvelders,
>
> To avoid the gigantic peaks of Si substrate (which are too dominant over
> peaks of phases in investigation on a thin film of 3 micron), we have
> tried to take a scan theta-two theta with a shift of 3 degree fo
Dear Rietvelders,
To avoid the gigantic peaks of Si substrate (which are too dominant over
peaks of phases in investigation on a thin film of 3 micron), we have
tried to take a scan theta-two theta with a shift of 3 degree for theta
(i.e. instead of theta-2theta corresponding to 5-10 degree at
Hello Wing
> I'm unable to get NIST 660 because they have been out of stock for a few
> months
As described by D. Balzar et al. (http://dx.doi.org/10.1107/S0021889804022551),
annealed CeO2 is an equivalent alternative.
Franz Werner
--
Tallinn University of Technology
Department of Chemistry
--
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