Dear Rietvelders,
To avoid the gigantic peaks of Si substrate (which are too dominant over
peaks of phases in investigation on a thin film of 3 micron), we have
tried to take a scan theta-two theta with a shift of 3 degree for theta
(i.e. instead of theta-2theta corresponding to 5-10 degree at the
beginning, I have set theta=8 degree and 2theta=10). In fact, we have
been able to reduce dramatically intensity of Si peaks but the
broadening of all peaks in the diffractogram is increased comparing to
the "normal" scan without shift of theta.
We have also tried to rotate the sample around its perpendicular axis
(angle Phi) to find the appropriate Phi where the peaks of Si are
slightly decreased and found that the broadening of peaks is the same as
in a "normal" theta-2theta scan.
Does anyone have any ideas about this increased broadening of peaks
during a theta-2theta scan with theta shifted ?
By the way, do you know others ways, besides the razing incidence, to
avoid the dominant peaks of substrate over the thin film ?
Thanks a lot in advance for your any helps.
Best regards,
---
Huy LE-QUOC,
Doctorant
LPSC/UJF-Grenoble INP-CNRS, Centre de Recherche
Plasmas-Matériaux-Nanostructures
Institut Néel/CNRS, Département "Matière Condensée, Matériaux et Fonctions"
53 rue des Martyrs, Grenoble 38026, FRANCE
Phone: +33 4 76 28 40 38
Fax: +33 4 76 28 40 11
