Hello, On Wed, Jul 11, 2018 at 5:50 PM, Danny Milosavljevic <dan...@scratchpost.org> wrote: > http://soc.yonsei.ac.kr/Abstract/International_journal/pdf/106_Data%20Randomization%20Scheme%20for%20Endurance%20Enhancement%20and%20Interference%20Mitigation%20of%20Multilevel%20Flash%20Memory%20Devices.pdf
Thanks a lot I didn't understand everything in there, but sufficiently to sleep a bit less stupid tonight... I think it boils down to that: this random data mitigates errors that are due to cell content interferences. I don't think it is directly related to cells wear. Do you concur ? -- Vincent Legoll
